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We address the issue of strain dependence of piezoelectric effect in semiconductor materials, which is manifested by the appearance of an electric field in response to crystal deformation. For III–V materials such as GaAs and InAs we find that strain considerably modifies the value of the piezoelectric coefficients. For the case of InAs pseudomorphically grown on GaAs substrate, our model predicts a sign reversal of the piezoelectric coefficients e₁₄, e₂₅ and e₃₆ from negative to positive for strains of around 7%. This might explain several discrepancies between the theoretical and experimental observations made on nanostructures such as III–V quantum dots.